MMBT5400 / mmbt5401 MMBT5400 / mmbt5401 pnp surface mount general purpose si-epi-planar transistors si-epi-planar universaltransisto ren fr die oberfl?chenmontage pnp version 2006-05-16 dimensions - ma?e [mm] 1 = b 2 = e 3 = c power dissipation ? verlustleistung 250 mw plastic case kunststoffgeh?use sot-23 (to-236) weight approx. ? gewicht ca. 0.01 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings (t a = 25c) grenzwerte (t a = 25c) MMBT5400 mmbt5401 collector-emitter-volt. ? kollektor-emitter-spannung b open - v ceo 120 v 150 v collector-base-voltage ? kollektor-basis-spannung e open - v cbo 130 v 160 v emitter-base-voltage ? emitter-basis-spannung c open - v ebo 5 v power dissipation ? verlustleistung p tot 250 mw 1 ) collector current ? kollektorstrom (dc) - i c 600 ma junction temperature ? sperrschichttemperatur storage temperature ? lagerungstemperatur t j t s -55...+150c -55?+150c characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. dc current gain ? kollektor-basis-stromverh?ltnis 2 ) - v ce = 5 v, - i c = 1 ma - v ce = 5 v, - i c = 10 ma - v ce = 5 v, - i c = 50 ma MMBT5400 h fe h fe h fe 30 40 40 ? ? ? ? 180 ? - v ce = 5 v, - i c = 1 ma - v ce = 5 v, - i c = 10 ma - v ce = 5 v, - i c = 50 ma mmbt5401 h fe h fe h fe 50 60 50 ? ? ? ? 240 ? collector-emitter saturation voltage ? kollektor-emitter-s?ttigungsspg. 2 ) - i c = 10 ma, - i b = 1 ma - i c = 50 ma, - i b = 5 ma - v cesat - v cesat ? ? ? ? 0.2 v 0.5 v base-emitter saturation voltage ? basis-emitter-s?ttigungsspannung 2 ) - i c = 10 ma, - i b = 1 ma - i c = 50 ma, - i b = 5 ma - v besat - v besat ? ? ? ? 1.0 v 1.0 v 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 tested with pulses t p = 300 s, duty cycle 2% ? gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% ? diotec semiconductor ag http://www.diotec.com/ 1 2.5 max 1.3 0.1 1.1 0.4 2.9 0.1 1 2 3 typ e code 1.9
MMBT5400 / mmbt5401 characteristics (t j = 25c) kennwerte (t j = 25c) collector-base cutoff current ? kollektor-basis-reststrom - v cb = 100 v, (e open) - v cb = 120 v, (e open) MMBT5400 mmbt5401 - i cbo - i cbo ? ? ? ? 50 na 50 na - v cb = 100 v, t j = 100c, (e open) - v cb = 120 v, t j = 100c, (e open) MMBT5400 mmbt5401 - i cbo - i cbo ? ? ? ? 50 a 50 a emitter-base-cutoff current ? emitter-basis-reststrom - v eb = 4 v, (c open) - i ebo ? ?- 50 na gain-bandwidth product ? transitfrequenz - i c = 10 ma, - v ce = 10 v, f = 100 mhz f t 100 mhz ? 300 mhz collector-base capacitance ? kollektor-basis-kapazit?t - v cb = 10 v, i e = i e = 0, f = 1 mhz c cbo ??6 pf noise figure ? rauschzahl - v ce = 5 v, - i c = 200 a, r s = 10 ? , f = 1 khz MMBT5400 mmbt5401 f f ? ? ? ? ? 8 db thermal resistance junction to ambient air w?rmewiderstand sperrschicht ? umgebende luft r tha < 420 k/w 1 ) recommended complementary npn transistors empfohlene komplement?re npn-transistoren mmbt5550 / mmbt5551 marking - stempelung MMBT5400 = 2l mmbt5401 = 2lx 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 http://www.diotec.com/ ? diotec semiconductor ag [%] p tot 120 100 80 60 40 20 0 [c] t a 150 100 50 0 power dissipation versus ambient temperature ) verlustleistung in abh. von d. umgebungstemp. ) 1 1
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